? 2014 ixys corporation, all rights reserved IXXH40N65B4H1 v ces = 650v i c110 = 40a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.0v t fi(typ) = 54ns ds100544b(12/14) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab extreme light punch through igbt for 5-30 khz switching features ? optimized for 5-30khz switching ? square rbsoa ? anti-parallel sonic diode ? avalanche rated ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 50 ? a t j = 150 ? c 3 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 1.50 2.00 v t j = 150 ? c 1.78 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 120 a i c110 t c = 110c 40 a i f110 t c = 110c 40 a i cm t c = 25c, 1ms 240 a ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 455 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g xpt tm 650v igbt genx4 tm w/ sonic diode
ixys reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ?? p to-247 (ixxh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc reverse sonic diode (frd) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.5 v t j = 150c 2.15 v i rm t j = 150c 25 a t rr t j = 150c 120 ns r thjc 0.60 c/w i f = 30a, v ge = 0v, -di f /dt = 500a/ s, v r = 300v symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 10 17 s c ie s 1560 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 200 pf c res 57 pf q g(on) 77 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 12 nc q gc 29 nc t d(on) 28 ns t ri 53 ns e on 1.40 mj t d(off) 144 ns t fi 54 ns e of f 0.56 0.90 mj t d(on) 24 ns t ri 42 ns e on 1.87 mj t d(off) 126 ns t fi 73 ns e off 0.78 mj r thjc 0.33 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 400v, r g = 5 ? note 2 inductive load, t j = 150c i c = 40a, v ge = 15v v ce = 400v, r g = 5 ? note 2
? 2014 ixys corporation, all rights reserved IXXH40N65B4H1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 9v 6v 8v 7v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 11v 13v 12v 8v 9v 14v 7v 6v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 80 00.5 11.522.5 33.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 11v 9v 8v 6v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 80a i c = 40a i c = 20a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 101112131415 v ge - volts v ce - volts i c = 80a t j = 25oc 20a 40a fig. 6. input admittance 0 10 20 30 40 50 60 70 4 5 6 7 8 9 10 11 12 v ge - volts i c - amperes t j = - 40oc 25oc t j = 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4H1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 325v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
? 2014 ixys corporation, all rights reserved IXXH40N65B4H1 fig. 12. inductive switching energy loss vs. gate resistance 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 5 10152025303540455055 r g - ohms e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 50 55 60 65 70 75 80 85 90 95 100 5 10152025303540455055 r g - ohms t f i - nanoseconds 50 100 150 200 250 300 350 400 450 500 550 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 5 ? ????? v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 5 ? ???? v ge = 15v v ce = 400v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 60 80 100 120 140 160 180 200 220 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t f i - nanoseconds 30 40 50 60 70 80 90 100 110 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 80 100 120 140 160 180 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v i c = 40a, 80a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4H1 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t r i - nanoseconds 15 20 25 30 35 40 45 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 22 24 26 28 30 32 34 36 38 40 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 280 5 10152025303540455055 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 120 140 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 40a i c = 80a
? 2014 ixys corporation, all rights reserved IXXH40N65B4H1 fig. 25. recovery energy e rec vs. -di f /d t 100 150 200 250 300 350 400 450 500 400 600 800 1000 1200 1400 1600 1800 2000 -di f / d t - a/s e rec - microjoules i f =50a 30a 10a t vj = 150oc v r = 300v fig. 26. dynamic parameters q rr , i rm vs. virtual junction temperature t vj 0.20 0.40 0.60 0.80 1.00 1.20 0 20 40 60 80 100 120 140 160 t vj - degrees centigrade k f k f i rm k f q rr v r = 300v i f = 50a -di f /dt = 900a/s fig. 22. reverse recovery charge q rr vs. -di f /dt 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 400 600 800 1000 1200 1400 1600 1800 2000 -di f /d t - a/s q rr - microcoulombs 10a i f = 50a 30a t vj = 150oc v r = 300v fig. 23. peak reverse current i rm vs. -di f /d t 10 20 30 40 50 60 70 400 600 800 1000 1200 1400 1600 1800 2000 -di f /d t - a/s i rr - amperes i f = 50a t vj = 150oc v r = 300v 30a 10a fig. 24. recover time t rr vs. -di f /d t 20 40 60 80 100 120 140 400 600 800 1000 1200 1400 1600 1800 2000 -di f /dt - a/s t rr - nanasecond s i f = 50a t vj = 150oc v r = 300v 30a 10a fig. 21. forward current vs. forward voltage 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 v f - volts i f - amperes 150oc t vj = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4H1 ixys ref: ixx_40n65b4h1(e5) 01-09-13/dmhp19-067f_4-03-14 fig. 27. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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